Bi1-xLaxFeO3 films on LaNiO3 bottom electrode by the sol-gel process

Journal of Physics D: Applied Physics

Volumn 40, Issue 1, 2007, Pages 242-246

  Liu, Hongri ^a,b   Liu, Zuli ^a   Li, Xiaolo ^a   Li, Xingao ^a   Yao, Kailun ^a  

^a HUAZHONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (China)

^b HUBEI NORMAL UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL ORIENTATION; CRYSTALLINE MATERIALS; ELECTRODES; HYSTERESIS LOOPS; LITHIUM COMPOUNDS; SILICON; SOL-GEL PROCESS; X RAY DIFFRACTION;

ANNEALING TEMPERATURE; LEAKAGE CONDUCTION; LEAKAGE CURRENT DENSITY;

BISMUTH COMPOUNDS;

EID: 33947640032     PISSN: 00223727     EISSN: 13616463     Source Type: Journal    
DOI: 10.1088/0022-3727/40/1/021     Document Type: Conference Paper

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