Electrostatic effect of localised charge in dual bit memory cells with discrete traps

ESSCIRC 2004 - Proceedings of the 34th European Solid-State Device Research Conference

Volumn , Issue , 2004, Pages 249-252

  Perniola, L ^a,b   Bernardini, S ^c   Iannaccone, G ^a,f   De Salvo, B ^d   Ghibaudo, G ^b   Masson, P ^c   Gerardi, C ^e  

^a UNIVERSITY OF PISA   (Italy)

^b IMEP LAHC   (France)

^c AIX MARSEILLE UNIVERSITÉ   (France)

^d CEA LETI   (France)

^e STMICROELECTRONICS   (Italy)

^f CNR   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

CODES (SYMBOLS); COMPUTER SIMULATION; ELECTROSTATICS; HOT CARRIERS; MATHEMATICAL MODELS; MICROELECTRONICS; NANOSTRUCTURED MATERIALS; PARTICLE BEAM INJECTION; THRESHOLD VOLTAGE;

DISCRETE TRAPS; DUAL BIT MEMORY CELLS; ELECTROSTATIC EFFECTS; NANOCRYSTAL MEMORIES;

NONVOLATILE STORAGE;

EID: 17644364454     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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