MIM capacitors using BaSm2Ti4O12 and Sm2Ti2O7 dielectrics

Journal of the Electrochemical Society

Volumn 153, Issue 8, 2006, Pages

  Jeong, Y H ^a   Kim, B J ^a   Jang, B Y ^a   Lim, J B ^a   Nahm, S ^a   Lee, H J ^b  

^a Korea University   (South Korea)

^b Korea Research Institute of Standards and Science   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; CRYSTALLINE MATERIALS; CURRENT DENSITY; DIELECTRIC PROPERTIES; ELECTRIC POTENTIAL; ELECTROCHEMISTRY; FILM GROWTH; THIN FILMS;

CAPACITANCE DENSITY; LOW LEAKAGE CURRENT DENSITY; METAL-INSULATOR-METAL (MIM) CAPACITORS; RAPID THERMAL ANNEALING (RTA);

MIM DEVICES;

EID: 33745493631     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.2208909     Document Type: Article

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