Impacts of a polycrystalline-silicon buffer layer on the performance and reliability of strained n -channel metal-oxide-semiconductor field-effect transistors with SiN capping

Applied Physics Letters

Volumn 90, Issue 12, 2007, Pages

  Lu, Ching Sen ^a   Lin, Horng Chih ^a,b   Huang, Jian Ming ^a   Lee, Yao Jen ^b  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b NATIONAL NANO DEVICE LABORATORIES   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER MOBILITY; ELECTRIC RESISTANCE; HYDROGEN; MOSFET DEVICES; POLYCRYSTALLINE MATERIALS; SILICON NITRIDE;

DEVICE DRIVE CURRENT; HOT CARRIER DEGRADATION; POLYCRYSTALLINE SILICON BUFFER LAYERS; SIN CAPPING;

BUFFER LAYERS;

EID: 33947589677     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2715122     Document Type: Article

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