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Volumn 52, Issue 10, 2005, Pages 2220-2225

Operation voltage dependence of memory cell characteristics in fully depleted floating-body cell

Author keywords

Distribution; MOSFETs; Random access memories; Silicon on insulator (SOI) technology; Threshold voltage

Indexed keywords

ARRAY DIAGNOSTIC MONITOR (ADM); FAIL-BIT PROBABILITY; FLOATING-BODY CELL (FBC);

EID: 33947418989     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2005.856808     Document Type: Article
Times cited : (22)

References (10)
  • 3
    • 0036610025 scopus 로고    scopus 로고
    • A capacitorless double-gate DRAM cell
    • Jun
    • C. Kuo, T. J. King, and C. Hu, "A capacitorless double-gate DRAM cell," IEEE Electron Device Lett., vol. 23, no. 6, pp. 345-347, Jun. 2002.
    • (2002) IEEE Electron Device Lett , vol.23 , Issue.6 , pp. 345-347
    • Kuo, C.1    King, T.J.2    Hu, C.3
  • 9
    • 21644432584 scopus 로고    scopus 로고
    • Scalability study on a capacitorless IT-DRAM: From single-gate PD-SOI to double-gate FinDRAM
    • T. Tanaka, E. Yoshida, and T. Miyashita, "Scalability study on a capacitorless IT-DRAM: from single-gate PD-SOI to double-gate FinDRAM," in IEDM Tech. Dig., 2004, pp. 919-922.
    • (2004) IEDM Tech. Dig , pp. 919-922
    • Tanaka, T.1    Yoshida, E.2    Miyashita, T.3
  • 10
    • 0039740033 scopus 로고
    • Charge-based large-signal model for thin-film SOI MOSFETs
    • Feb
    • H. K. Lim and J. G. Fossum, "Charge-based large-signal model for thin-film SOI MOSFETs," IEEE Trans. Electron Devices, vol. ED-32, no. 2, pp. 446-457, Feb. 1985.
    • (1985) IEEE Trans. Electron Devices , vol.ED-32 , Issue.2 , pp. 446-457
    • Lim, H.K.1    Fossum, J.G.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.