Ion transport phenomena in oxide layer on the silicon surface and electron-ion exchange effects at the SiO2/Si interface

Journal of Applied Physics

Volumn 89, Issue 1, 2001, Pages 130-145

  Goldman, E I ^a   Zhdan, A G ^a   Chucheva, G V ^a  

^a INST OF RADIO ENG AND ELECTRONICS   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0038790909     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1327610     Document Type: Article

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