Quantitative examination of mobility lowering associated with ultrathin gate oxides in silicon metal-oxide-semiconductor inversion layer

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 43, Issue 4 B, 2004, Pages 1699-1703

  Koga, Junji ^a   Ishihara, Takamitsu ^a   Takagi, Shin Ichi ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

Gate oxide scaling; Inversion layer mobility; Metal oxide semiconductor (mos); Remote coulomb scattering; Roughness scattering

Indexed keywords

DATA REDUCTION; ELECTRIC CONDUCTANCE; GATES (TRANSISTOR); INTERFACES (MATERIALS); SILICA; SILICON;

GATE OXIDE SCALING; INVERSION-LAYER MOBILITY; REMOTE COULOMB SCATTERING; ROUGHNESS SCATTERING;

MOS DEVICES;

EID: 3142645330     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.43.1699     Document Type: Conference Paper

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