Hot-carrier effects on radio frequency noise characteristics of LDD n-type metal-oxide-semiconductor field effect transistors

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 18, Issue 2, 2000, Pages 765-769

  Kwan, W S ^a,c   Chen, C H ^b,c   Deen, M J ^b,c  

^a Rockwell Semiconductor Systems   (United States)

^b MCMASTER UNIVERSITY   (Canada)

^c SIMON FRASER UNIVERSITY   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; CARRIER MOBILITY; CMOS INTEGRATED CIRCUITS; COMPUTER SIMULATION; ELECTRIC RESISTANCE; GATES (TRANSISTOR); HOT CARRIERS; SCATTERING PARAMETERS; SEMICONDUCTOR DEVICE TESTING; SEMICONDUCTOR JUNCTIONS; SPURIOUS SIGNAL NOISE; THRESHOLD VOLTAGE;

CHANNEL CHARGE MOBILITY; HOT CARRIER EFFECT; PARASITIC DRAIN CAPACITANCE; PARASITIC DRAIN RESISTANCE; SOURCE RESISTANCE;

MOSFET DEVICES;

EID: 0034156103     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.582176     Document Type: Article

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