On the origin of the thermal - field asymmetry in ionic polarization/depolarization of oxide in Si-MOS structures

Semiconductors

Volumn 34, Issue 6, 2000, Pages 650-654

  Gol'dman, E I ^a   Zhdan, A G ^a   Chucheva, G V ^a  

^a INST OF RADIO ENG AND ELECTRONICS   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0034195540     PISSN: 10637826     EISSN: None     Source Type: Journal    
DOI: 10.1134/1.1188047     Document Type: Article

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