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Volumn 85, Issue 1, 1999, Pages 551-557

Fowler-Nordheim current injection and write/erase characteristics of metal-oxide-nitride-oxide-Si structure grown with helicon-wave excited plasma processing

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[No Author keywords available]

Indexed keywords


EID: 0040153780     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.369488     Document Type: Article
Times cited : (7)

References (18)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.