A new multi-channel dual-gate poly-Si TFT employing excimer laser annealing recrystallization on pre-patterned a-Si thin film

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 2002, Pages 561-564

  Song, I H ^a   Kim, C H ^b   Kang, S H ^a   Nam, W J ^a   Han, M K ^a  

^a Seoul National University   (South Korea)

^b Hyundai Display Technology Inc   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; EXCIMER LASERS; GRAIN BOUNDARIES; GRAIN SIZE AND SHAPE; POLYSILICON;

MULTI-CHANNEL STRUCTURE;

THIN FILM TRANSISTORS;

EID: 0036931224     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (7)

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2. C. H. Oh and M. Matsumura, "A Proposed Single Grain-Boundary Thin-Film Transistor", IEEE Electron Device Letter, vol. 22, p. 20, 2001.
3. J. H. Jeon, M. C. Lee, K. C. Park, S. H. Jung and M. K. Han, "A New Poly-Si TFT with Selectively Doped Channel Fabricated by Novel Excimer Laser Annealing", IEDM Tech. Digest, p. 213, 2000.
4. C. H. Kim, I. H. Song, S. H. Jung and M. K. Han, :A New High-Performance Poly-Si TFT by Simple Excimer Laser Annealing on Selectively Floating a-Si Layer". IEDM Tech. Digest, p751, 2001
5. J.S. Im, and H.J. Kim, "New excimer-laser-crystalliztion method for producing large-grained and grain boundary location cotrolled Si films for thin film transistors", Appl. Phys. Lett., vol. 63, no. 14, p. 1969, 1993.
6. 2", J. Appl. Phys., vol. 81, No. 3, p. 1204, 1997
7. K. Yamaguchi, "Modeling and characterization of polycrystalline-silicon thin film transistors with a channel-length comparable to a grain size", J. Appl. Phys., vol. 89, No. 1, p. 590, 2001