Lateral uniformity in HgCdTe layers grown by molecular beam epitaxy

Journal of Electronic Materials

Volumn 34, Issue 6, 2005, Pages 779-785

  Nosho, Brett Z ^a   Roth, John A ^a   Jensen, John E ^a   Pham, L E ^b  

^a Hughes Aircraft Co   (United States)

^b RAYTHEON COMPANY   (United States)

Author keywords

Arsenic doping; HgCdTe; Infrared; Molecular beam epitaxy (MBE)

Indexed keywords

ARSENIC; COLLOIDAL GRAPHITE; DEFECTS; DOPING (ADDITIVES); FOURIER TRANSFORM INFRARED SPECTROSCOPY; INFRARED RADIATION; MAPPING; MOLECULAR BEAM EPITAXY; SUBSTRATES;

AUTOMATED FEEDBACK; SECONDARY ION MASS SPECTROSCOPY (SIMS); SPATIAL MAPPING; TEMPERATURE VARIATIONS;

MERCURY COMPOUNDS;

EID: 21644464201     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-005-0020-x     Document Type: Conference Paper

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