Undoped high mobility two-dimensional hole-channel GaAs/Al xGa1-xAs heterostructure field-effect transistors with atomic-layer-deposited dielectric

Applied Physics Letters

Volumn 90, Issue 11, 2007, Pages

  Lu, T M ^a   Luhman, D R ^a   Lai, K ^a,c   Tsui, D C ^a   Pfeiffer, L N ^b   West, K W ^b  

^a Princeton University   (United States)

^b LUCENT TECHNOLOGIES   (United States)

^c STANFORD UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

HOLE SYSTEMS; PARAMETER SPACES; TWO DIMENSIONAL HOLES;

ATOMIC LAYER DEPOSITION; CURRENT VOLTAGE CHARACTERISTICS; DIELECTRIC MATERIALS; HETEROJUNCTIONS; HOLE MOBILITY; SEMICONDUCTING GALLIUM ARSENIDE; TRANSPORT PROPERTIES;

FIELD EFFECT TRANSISTORS;

EID: 33947325678     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2714094     Document Type: Article

References (16)

1. M. Shayegan, e-print cond-mat/0505520.
2. R. C. Eden, Technical Digest of the 25th Annual IEEE GaAs IC Symposium, 2003 (unpublished), p. 7.
3. B. E. Kane, L. N. Pfeiffer, K. W. West, and C. K. Harnett, Appl. Phys. Lett. 63, 2132 (1993).
4. B. E. Kane, L. N. Pfeiffer, and K. W. West, Appl. Phys. Lett. 67, 1262 (1995).
5. C. L. Chen, L. J. Mahoney, K. B. Nichols, E. R. Brown, and B. F. Gramstorff, IEEE Electron Device Lett. 17, 413 (1996).
6. N. Furuhata, M. Fujii, S. Asai, T. Maeda, and Y. Ohno, Solid-State Electron. 42, 1049 (1998).
7. T. Saku, K. Muraki, and Y. Hirayama, Jpn. J. Appl. Phys., Part 2 37, L765 (1998).
8. W. R. Clarke, A. P. Micolich, A. R. Hamilton, and M. Y. Simmons, J. Appl. Phys. 99, 023707 (2006).
9. R. L. Willett, L. N. Pfeiffer, and K. W. West, Appl. Phys. Lett. 89, 242107 (2006).
10. K. L. Seaward, Appl. Phys. Lett. 61, 3002 (1992).
11. S. J. Pearton, F. Ren, J. R. Lothian, T. R. Fullowan, R. F. Kopf, U. K. Chakrabarti, S. P. Hui, A. B. Emerson, R. L. Kostelak, and S. S. Pei, J. Vac. Sci. Technol. B 9, 2487 (1991).
12. P. D. Ye, G. D. Wilk, J. Kwo, B. Yang, H.-J. L. Gossmann, M. Frei, S. N. G. Chu, J. P. Mannaerts, M. Sergent, M. Hong, K. Ng, and J. Bude, IEEE Electron Device Lett. 24, 209 (2003).
13. P. D. Ye, G. D. Wilk, E. E. Tois, and J. J. Wang, Appl. Phys. Lett. 87, 013501 (2005).
14. Y. P. Li, T. Sajoto, L. W. Engel, D. C. Tsui, and M. Shayegan, Phys. Rev. B 47, 9933 (1993).
15. M. Shayegan, V. J. Goldman, C. Jiang, T. Sajoto, and M. Santos, Appl. Phys. Lett. 52, 1086 (1988).
16. J. P. Eisenstein, H. L. Stormer, V. Narayanamurti, A. C. Gossard, and W. Wiegmann, Phys. Rev. Lett. 53, 2579 (1984).