메뉴 건너뛰기




Volumn 17, Issue 8, 1996, Pages 413-415

Self-aligned p-channel MISFET with a low-temperature-grown GaAs gate insulator

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC FREQUENCY MEASUREMENT; ELECTRIC RESISTANCE; EPITAXIAL GROWTH; FABRICATION; GATES (TRANSISTOR); INSULATING MATERIALS; LOW TEMPERATURE EFFECTS; MOLECULAR BEAM EPITAXY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE MANUFACTURE; TRANSCONDUCTANCE;

EID: 0030213035     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.511592     Document Type: Article
Times cited : (2)

References (16)
  • 3
    • 0021519392 scopus 로고
    • M. Hirano K. Oe F. Yanagawa P-channel AlGaAs/GaAs heterostructure FET's employing two-dimensional hole gas Jpn. J. Appl. Phys. 23 L868 870 1984
    • (1984) , vol.23 , pp. L868-870
    • Hirano, M.1    Oe, K.2    Yanagawa, F.3
  • 4
    • 0027542382 scopus 로고
    • J. K. Abrokwah J.-H. Huang W. J. Ooms J. A. Hallmark Anisotype-gate self-aligned p-channel heterostructure field-effect transistors IEEE Trans. Electron Devices 40 278 284 1993 16 4672 182501
    • (1993) , vol.40 , pp. 278-284
    • Abrokwah, J.K.1    Huang, J.-H.2    Ooms, W.J.3    Hallmark, J.A.4
  • 5
    • 0025590059 scopus 로고
    • L.-W. Yin Y. Hwang J. H. Lee R. M. Kolbas R. J. Trew U. K. Mishra Improved breakdown voltage in GaAs MESFET's utilizing surface layers of GaAs grown at a low temperature by MBE IEEE Electron Device Lett. 11 561 563 1990 55 2301 63040
    • (1990) , vol.11 , pp. 561-563
    • Yin, L.-W.1    Hwang, Y.2    Lee, J.H.3    Kolbas, R.M.4    Trew, R.J.5    Mishra, U.K.6
  • 6
    • 0027644441 scopus 로고
    • D. C. Look Molecular beam epitaxial GaAs grown at low temperatures Thin Solid Films 231 61 73 1993
    • (1993) , vol.231 , pp. 61-73
    • Look, D.C.1
  • 8
    • 0026835174 scopus 로고
    • Y.-J. Chan D. Pavlidis Single and dual p-doped channel In $_{0.52}$ Al $_{0.48}$ As/In $_x$ Ga $_{1-x}$ As ( $x = 0.53,\\;0.65$) FET's and the role of doping IEEE Trans. Electron Devices 39 466 472 1992 16 3498 123464
    • (1992) , vol.39 , pp. 466-472
    • Chan, Y.-J.1    Pavlidis, D.2
  • 9
    • 0027810680 scopus 로고
    • A. Verma J. Tu J. S. Smith H. Fujioka E. R. Weber Electrical characteristics of low temperature-Al $_{0.3}$ Ga $_{0.7}$ As J. Electron. Mater. 22 1417 1420 1993
    • (1993) , vol.22 , pp. 1417-1420
    • Verma, A.1    Tu, J.2    Smith, J.S.3    Fujioka, H.4    Weber, E.R.5
  • 11
    • 0020116930 scopus 로고
    • C. P. Lee S. J. Lee B. M. Welch Carrier injection and backgating effect in GaAs MESFET's IEEE Electron Device Lett. EDL-3 97 98 1982
    • (1982) , vol.EDL-3 , pp. 97-98
    • Lee, C.P.1    Lee, S.J.2    Welch, B.M.3
  • 12
    • 0023422653 scopus 로고
    • S. Fujita T. Mizutani Characterization of heterostructure complementary MISFET circuits employing the new gate current model IEEE Trans. Electron Devices ED-34 1889 1896 1987
    • (1987) , vol.ED-34 , pp. 1889-1896
    • Fujita, S.1    Mizutani, T.2
  • 13
    • 0026239286 scopus 로고
    • R. A. Kiehl P. E. Hallali J. Yates M. A. Tischler R. M. Potemski F. Cardone High-transconductance p-channel AlGaAs/GaAs HFET's with low-energy beryllium and fluorine co-implantation self-alignment IEEE Electron Device Lett. 12 530 532 1991 55 3414 119179
    • (1991) , vol.12 , pp. 530-532
    • Kiehl, R.A.1    Hallali, P.E.2    Yates, J.3    Tischler, M.A.4    Potemski, R.M.5    Cardone, F.6
  • 14
    • 0021603608 scopus 로고
    • R. A. Kiehl A. C. Gossard Complementary p-MODFET and n-HB MESFET (Al, Ga)As transistors IEEE Electron Device Lett. EDL-5 521 523 1984
    • (1984) , vol.EDL-5 , pp. 521-523
    • Kiehl, R.A.1    Gossard, A.C.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.