High-mobility two-dimensional electron gas in an undoped heterostructure: Mobility enhancement after illumination

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 37, Issue 7 PART A, 1998, Pages

  Saku, Tadashi ^a   Muraki, Koji ^a   Hirayama, Yoshiro ^a  

^a Kashino Diverse Brain Research Laboratory of NTT Communication Science Laboratories   (Japan)

Author keywords

AlGaAs; Field effect; GaAs; High mobility; Inverted heterostructure; Two dimensional electron gas; Undoped

Indexed keywords

CARRIER MOBILITY; GATES (TRANSISTOR); HETEROJUNCTIONS; HIGH ELECTRON MOBILITY TRANSISTORS; INTERFACES (MATERIALS); SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE;

INVERTED HETEROSTRUCTURES;

ELECTRON GAS;

EID: 0032120697     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.37.l765     Document Type: Article

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