Simple-layered high mobility field effect heterostructured two-dimensional electron device

Applied Physics Letters

Volumn 89, Issue 24, 2006, Pages

  Willett, R L ^a   Pfeiffer, L N ^a   West, K W ^a  

^a LUCENT TECHNOLOGIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DOPING (ADDITIVES); ELECTRON MOBILITY; ELECTRON TRANSPORT PROPERTIES; FABRICATION; GATES (TRANSISTOR); HETEROJUNCTIONS;

ELECTRON DENSITIES; HETEROSTRUCTURE FIELD EFFECT DEVICE; METALLIC OVERLAPPING GATES;

FIELD EFFECT TRANSISTORS;

EID: 33845788334     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2403183     Document Type: Article

References (6)

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3. L. N. Pfeiffer, K. W. West, H. L. Stormer, and K. W. Baldwin, Appl. Phys. Lett. 55, 1888 (1989).
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5. B. E. Kane, L. N. Pfeiffer, K. W. West, and C. K. Harnett, Appl. Phys. Lett. 63, 2132 (1993).
6. L. J. van der Pauw, Philips Tech. Rev. 8, 220 (1958).