SCOPUS 정보 검색 플랫폼

Journal of Crystal Growth

Volumn 278, Issue 1-4, 2005, Pages 351-354

High responsivity quantum-dot infrared photodetector with Al 0.1Ga0.9As blocking layers at both sides of the structure

(3) Lin, Shih Yen a Chi, Jim Yong a Lee, Si Chen b

a INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE (Taiwan)

b NATIONAL TAIWAN UNIVERSITY (Taiwan)

Author keywords

B3. Infrared devices

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC POTENTIAL; ELECTRON TRANSITIONS; ELECTRON TUNNELING; HIGH TEMPERATURE OPERATIONS; PHOTOVOLTAIC CELLS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR QUANTUM DOTS;

PHOTOVOLTAIC RESPONSE; QUANTUM-DOT INFRARED PHOTODETECTORS (QDIP); QUANTUM-DOT STRUCTURES; STRAIN-INDUCED DISLOCATIONS;

INFRARED DETECTORS;

EID: 18444403166 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/j.jcrysgro.2005.01.025 Document Type: Conference Paper

Times cited : (4)

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