Design and characterization of superlattice infrared photodetector operating at low bias voltage

IEEE Transactions on Electron Devices

Volumn 47, Issue 5, 2000, Pages 944-948

  Hsu, Mao Chieh ^a,b   Hsu, Yao Fong ^b   Lin, Shih Yan ^b   Kuan, Chieh Hsiung ^a,b  

^a IEEE   (Taiwan)

^b NATIONAL TAIWAN UNIVERSITY   (Taiwan)

Author keywords

Noise; Noise measurement; Photodetector; Quantum well infrared photodetector

Indexed keywords

EID: 0004891266     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.841225     Document Type: Article

References (19)

1. B. F. Levine, "Quantum-well infrared photodetectors," J. Appl. Phys., vol. 74, pp. R1-R81, 1993.
2. H. C. Liu, B. F. Levine, and J. Y. Andersson, Eds., Quantum Well Intersubband Transition Physics and Devices. New York: Plenum, 1994.
3. S. R. Andrews and B. A. Miller, "Experimental and theoretical studies of the performance of quantum-well infrared photodetectors," J. Appl. Phys.. vol. 70, pp. 993-1003, 1991.
4. G. Sarusi, S. D. Gunapala, J. S. Park, and B. F. Levine, "Design and performance of very long-wavelength GaAs/Al-4.Gai-4. As quantum-well infrared photodetectos," J. Appl. Phys.. vol. 76, pp. 6001-6008, 1994.
5. J. Chu and S. S. Li, "The effect of compressive strain on the performance of p-type quantum-well infrared photodetectors," IEEE J. Quantum Electron., vol. 33, pp. 1104-1113, 1997.
6. B. F. Levine et al.. "Photoexcited escape probability, optical gain, and noise in quantum well infrared photodetectors," J. Appl. Phys., vol. 72, pp. 4429-4443, 1992.
7. L. C. West and S. J. Eglash, "First observation of an extremely large dipole infrared transition within the conduction band of a GaAs quantum well," Appl. Phys. Lett., vol. 46, pp. 1156-1159, 1983.
8. S. D. Gunapala et al., "Long-wavelength 640 × 486 GaAs/AlGaAs quantum well infrared photodetectos snap-shot camera," IEEE. Trans. Electron Devices, vol. 45, pp. 1890-1895, Sept. 1998.
9. G. Hasnain, B. F. Levine, S. Gunapala, and N. Chand, "Large photoconductive gain in quantum well infrared photodetectors," Appl. Phys. Lett., vol. 57, pp. 608-610, 1990.
10. E. Pelve et al., "Analysis of the dark current in doped-well multiple quantum well AlGaAs infrared photodetectors," J. Appl. Phys., vol. 66, pp. 5656-5659, 1989.
11. C. H. Kuan et al., "Hot-electron distribution in multiple quantum well infrared photodetectors,"Appl. Phys. Lett, vol. 63, pp. 2091-2093, 1993.
12. A. Kastalsky, T. Duffield, S. J. Alien, and J. Harbison, "Photovotaic detection of infrared light in a GaAs/AlGaAs superlattice," Appl. Phys. Lett., vol. 52, pp. 1320-1322, 1988.
13. O. Byungsung et al, "Long-wavelength infrared detection in Kastalsky-type superlattice structure," Appl. Phys. Lett., vol. 57, pp. 503-505, 1990.
14. C. S. Wu et al., "Novel GaAs/AsGaAs multiquantum-well Schottkyjunction device and its photovoltaic LWIR detection," IEEE Trans. Electron Devices, vol. 39, pp. 234-240, 1992.
15. K. M. S. Bandara et al., "GaAs/AlGaAs superlattice miniband detector with 14.5 /j,m peak response," Appl. Phys. Lett., vol. 60, pp. 3022-3024, 1992.
16. S.D. Gunapala, B. F. Levine, and N. Chand, "Bound to continuum superlattice miniband long wavelength GaAs/AU Gat ,As photodetectors," J. Appl. Phys., vol. 70, pp. 305-308, 1991.
17. V. I. Dalai, "Simple model for internal photoemission," J. Appl. Phys., vol. 42, pp. 2274-2279, 1971.
18. M. Helm et al., "Infrared absorption in superlattices: A probe of the miniband dispersion and the structure of the impurity band," Phys. Rev. B, vol. 48, pp. 1601-1606, 1993.
19. K. M. S. V. Bandara, B. F. Levine, and M. T. Asom, "Tunneling emitter undoped quantum-well infrared photodetector," J. Appl. Phys., vol. 74, pp. 346-350, 1993.