Structure transition between two GaAs(0 0 1)-c(4×4) surface reconstructions in As4 flux

Journal of Crystal Growth

Volumn 301-302, Issue SPEC. ISS., 2007, Pages 22-25

  Arai, T ^a   Suzuki, M ^a   Ueno, Y ^a   Okabayashi, J ^a   Yoshino, J ^a  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

A1. Scanning tunneling microscopy; A1. Surface structure; A3. Molecular beam epitaxy; B2. GaAs

Indexed keywords

ANNEALING; GROWTH TEMPERATURE; MOLECULAR BEAM EPITAXY; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTING GALLIUM ARSENIDE; SURFACE RECONSTRUCTION;

BARRIER FORMATION; HETERODIMERS; STRUCTURE TRANSITION;

SURFACE STRUCTURE;

EID: 33947318212     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2006.11.249     Document Type: Article

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