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Volumn 493, Issue 1-3, 2001, Pages 227-231
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Structural analysis of GaAs(0 0 1)-c(4 × 4) with LEED IV technique
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Author keywords
Gallium arsenide; Low energy electron diffraction (LEED); Scanning tunneling microscopy
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Indexed keywords
DIMERIZATION;
DIMERS;
LOW ENERGY ELECTRON DIFFRACTION;
MOLECULAR BEAM EPITAXY;
REFLECTION HIGH ENERGY ELECTRON DIFFRACTION;
SCANNING TUNNELING MICROSCOPY;
STRUCTURAL ANALYSIS;
SURFACE STRUCTURE;
BOND LENGTHS;
SEMICONDUCTING GALLIUM ARSENIDE;
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EID: 0035501096
PISSN: 00396028
EISSN: None
Source Type: Journal
DOI: 10.1016/S0039-6028(01)01221-3 Document Type: Article |
Times cited : (20)
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References (17)
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