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Volumn 493, Issue 1-3, 2001, Pages 227-231

Structural analysis of GaAs(0 0 1)-c(4 × 4) with LEED IV technique

Author keywords

Gallium arsenide; Low energy electron diffraction (LEED); Scanning tunneling microscopy

Indexed keywords

DIMERIZATION; DIMERS; LOW ENERGY ELECTRON DIFFRACTION; MOLECULAR BEAM EPITAXY; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SCANNING TUNNELING MICROSCOPY; STRUCTURAL ANALYSIS; SURFACE STRUCTURE;

EID: 0035501096     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0039-6028(01)01221-3     Document Type: Article
Times cited : (20)

References (17)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.