LEED structural analysis of GaAs(0 0 1)-c(4 × 4) surface

Surface Science

Volumn 566-568, Issue 1-3 PART 1, 2004, Pages 89-93

  Romanyuk, O ^a   Jiricek P ^a   Cukr, M ^a   Bartos I ^a  

^a INSTITUTE OF PHYSICS   (Czech Republic)

Author keywords

Electron solid interactions, scattering, diffraction; Gallium arsenide; Low energy electron diffraction (LEED); Low index single crystal surfaces; Molecular beam epitaxy; Surface relaxation and reconstruction

Indexed keywords

DIMERS; LOW ENERGY ELECTRON DIFFRACTION; MOLECULAR BEAM EPITAXY; RELAXATION PROCESSES; SEMICONDUCTING GALLIUM ARSENIDE; SINGLE CRYSTALS;

ELECTRON-SOLID INTERACTIONS; GALLIUM ARSENIDE; LOW INDEX SINGLE CRYSTAL SURFACES; SURFACE RELAXATION;

SURFACE STRUCTURE;

EID: 4544274454     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.susc.2004.05.027     Document Type: Conference Paper

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