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Volumn 10, Issue 5, 2007, Pages 142-144

A fabrication method for reduction of silicide contamination in polycrystalline-silicon thin-film transistors

Author keywords

[No Author keywords available]

Indexed keywords

CONTAMINATION; CRYSTALLIZATION; DEGRADATION; ELECTRIC PROPERTIES; LEAKAGE CURRENTS; NICKEL COMPOUNDS; POLYSILICON; SILICIDES;

EID: 33947305105     PISSN: 10990062     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.2710962     Document Type: Article
Times cited : (13)

References (13)
  • 9
    • 0032314068 scopus 로고    scopus 로고
    • 56th Annual Device Research Conference Digest, Charlottesville, VA
    • G. A. Bhat, Z. Jin, H. S. Kwok, and M. Wong, in 56th Annual Device Research Conference Digest, Charlottesville, VA, 1998, pp. 110-113, IEEE (1998).
    • (1998)
    • Bhat, G.A.1    Jin, Z.2    Kwok, H.S.3    Wong, M.4


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.