High mobility poly-Si TFT by a new excimer laser annealing method for large area electronics

Technical Digest - International Electron Devices Meeting, IEDM

Volumn 1991-January, Issue , 1991, Pages 563-566

  Kuriyama, Hiroyulu ^a   Kiyama, Seiichi ^a   Noguchi, Shigeru ^a   Kuwahara, Takashi ^a   Ishida, Satoshi ^a   Nohda, Tomoyuki ^b   Sano, Keiichi ^b   Iwata, Hiroshi ^b   Tsuda, Shinya ^a   Nakano, Shoichi ^a  

^a Giant Electronics Technology Co Ltd ^*  (Japan)

^b SANYO ELECTRIC CO LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON DEVICES; EXCIMER LASERS; POLYCRYSTALLINE MATERIALS; SILICON; TEMPERATURE; THIN FILM TRANSISTORS; THIN FILMS;

EXCIMER LASER ANNEALING; HIGH THROUGHPUT; INTERNAL DEFECTS; LARGE-AREA ELECTRONICS; LOW TEMPERATURES; LOW- TEMPERATURE PROCESS; SOLIDIFICATION PROCESS; SUBSTRATE HEATING;

ANNEALING;

EID: 34547923429     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.1991.235407     Document Type: Conference Paper

References (0)