Quaternary InGaAsSb thermophotovoltaic diodes

IEEE Transactions on Electron Devices

Volumn 53, Issue 12, 2006, Pages 2879-2888

  Dashiell, Michael W ^b   Beausang, John F ^b   Ehsani, Hassan ^b   Nichols, G J ^b   Depoy, David M ^b   Danielson, Lee R ^b   Talamo, Phil ^b   Rahner, Kevin D ^b   Brown, Edward J ^b   Burger, Steven R ^b   Fourspring, Patrick M ^b   Topper Jr , William F ^b   Baldasaro, P F ^b   Wang, Christine A ^c   Huang, Robin K ^a,c   Connors, Michael K ^c   Turner, George W ^a,c   Shellenbarger, Zane A ^d   Taylor, Gordon ^a,d   Li, Jizhong ^e   Martinelli, Ramon ^a,d   Donetski, Dmitry ^a,f   Anikeev, Sergei ^f   Belenky, Gregory L ^a,f   Luryi, Serge ^a,f   more..

^a IEEE

^b LOCKHEED MARTIN   (United States)

^c MASSACHUSETTS INSTITUTE OF TECHNOLOGY   (United States)

^d SARNOFF CORPORATION   (United States)

^e LEHIGH UNIVERSITY   (United States)

^f STONY BROOK UNIVERSITY   (United States)

Author keywords

Diodes; Indium gallium arsenide antimonide; Photovoltaic

Indexed keywords

CRYSTAL GROWTH; CRYSTAL LATTICES; ENERGY CONVERSION; METALLORGANIC VAPOR PHASE EPITAXY; OPTICAL PROPERTIES; SEMICONDUCTING INDIUM GALLIUM ARSENIDE;

PHOTON ABSORPTION; RECOMBINATION COEFFICIENTS; THERMOPHOTOVOLTAIC (TPV) DIODES;

SEMICONDUCTOR DIODES;

EID: 33947278948     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2006.885087     Document Type: Article

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