Nanofabrication on a Si surface by slow highly charged ion impact

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 256, Issue 1, 2007, Pages 543-546

  Tona, Masahide ^a,b   Watanabe, Hirofumi ^a,b   Takahashi, Satoshi ^a   Nakamura, Nobuyuki ^a   Yoshiyasu, Nobuo ^a   Sakurai, Makoto ^c   Terui, Toshifumi ^d   Mashiko, Shinro ^d   Yamada, Chikashi ^a   Ohtani, Shunsuke ^a,b  

^a UNIVERSITY OF ELECTRO COMMUNICATIONS   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

^c KOBE UNIVERSITY   (Japan)

^d NATIONAL INSTITUTE OF INFORMATION AND COMMUNICATIONS TECHNOLOGY   (Japan)

Author keywords

Highly charged ion (HCI); Highly oriented pyrolytic graphite (HOPG) surface; Potential sputtering; Si(1 1 1) (7 7) surface

Indexed keywords

GRAPHITE; HEAVY IONS; MOLECULES; NANOSTRUCTURED MATERIALS; OXIDATION; SCANNING TUNNELING MICROSCOPY; SURFACE STRUCTURE;

HIGHLY CHARGED ION (HCI); HIGHLY ORIENTED PYROLYTIC GRAPHITE (HOPG) SURFACES; POTENTIAL SPUTTERING; SI(1 1 1)-(7 × 7) SURFACE;

SILICON;

EID: 33947189001     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nimb.2006.12.057     Document Type: Article

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