Current-voltage characteristics of p-GaAs/n-GaN heterojunction fabricated by wafer bonding

Applied Physics Letters

Volumn 90, Issue 10, 2007, Pages

  Liang, Ting ^a   Guo, Xia ^a   Guan, Baolu ^a   Guo, Jing ^a   Gu, Xiaoling ^a   Lin, Qiaoming ^a   Wu, Di ^a   Gao, Guo ^a   Zhu, Yanxu ^a   Shen, Guandi ^a  

^a BEIJING UNIVERSITY OF TECHNOLOGY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

DATA ACQUISITION; ELECTRIC CURRENTS; ELECTRIC SPACE CHARGE; HETEROJUNCTIONS; SEMICONDUCTING GALLIUM ARSENIDE; TEMPERATURE DISTRIBUTION; WAFER BONDING;

AMORPHOUS LAYERS; LOGARITHMIC SCALES; SINGLE-CHARGE INJECTION; SPACE-CHARGE-LIMITED CURRENTS (SCLC);

CURRENT VOLTAGE CHARACTERISTICS;

EID: 33947179101     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2710750     Document Type: Article

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