Simple nondestructive extraction of the vertical channel-impurity profile of small-size metal-oxide-semiconductor field-effect transistors

Applied Physics Letters

Volumn 80, Issue 16, 2002, Pages 2994-2996

  Mattausch, Hans Jürgen ^a   Suetake, Masami ^a   Kitamaru, Daisuke ^a   Miura Mattausch, Mitiko ^a   Kumashiro, Shigetaka ^b   Shigyo, Naoyuki ^b   Odanaka, Shinji ^b   Nakayama, Noriaki ^b  

^a HIROSHIMA UNIVERSITY   (Japan)

^b SEMICONDUCTOR TECHNOLOGY ACADEMIC RESEARCH CENTER   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANALYTIC FUNCTIONS; CHANNEL LENGTH; CHANNEL PROFILE; IMPROVED METHODS; METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR; MOS-FET; MOSFETS; NON DESTRUCTIVE;

DIELECTRIC DEVICES; MIXED CONVECTION; MOSFET DEVICES;

TRANSISTORS;

EID: 79955983690     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1471381     Document Type: Article

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