Complete surface-potential-based fully-depleted silicon-on-insulator metal-oxide-semiconductor field-effect-transistor model for circuit simulation

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 43, Issue 4 B, 2004, Pages 2166-2169

  Kitamaru, Daisuke ^a   Uetsuji, Yasuhito ^a   Sadachika, Norio ^a   Miura Mattausch, Mitiko ^a  

^a HIROSHIMA UNIVERSITY   (Japan)

Author keywords

Circuit convergence; Circuit simulation model; Device feature; SOI MOSFET; Surafce potential

Indexed keywords

COMPUTER SIMULATION; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC CURRENTS; ELECTRIC POTENTIAL; INTEGRATED CIRCUITS; ITERATIVE METHODS; MATHEMATICAL MODELS; POISSON DISTRIBUTION; SILICON ON INSULATOR TECHNOLOGY;

CIRCUIT CONVERGENCE; CIRCUIT SIMULATION MODELS; DEVICE FEATURE; SOI-MOSFET; SURFACE POTENTIAL;

MOSFET DEVICES;

EID: 3142605257     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.43.2166     Document Type: Conference Paper

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