Physical modeling of the reverse-short-channel effect for circuit simulation

IEEE Transactions on Electron Devices

Volumn 48, Issue 10, 2001, Pages 2449-2452

  Miura Mattausch, M ^a   Suetake, M ^a   Mattausch, H J ^a   Kumashiro, S ^b   Shigyo, N ^b   Odanaka, S ^b   Nakayama, N ^b  

^a HIROSHIMA UNIVERSITY   (Japan)

^b SEMICONDUCTOR TECHNOLOGY ACADEMIC RESEARCH CENTER   (Japan)

Author keywords

Channel impurity profile; Circuit simulation model; Metal oxide semiconductor field effect (MOSFET); Reverse short channel effect (RSCE); Short channel effect (SCE); Threshold voltage

Indexed keywords

APPROXIMATION THEORY; COMMUNICATION CHANNELS (INFORMATION THEORY); MOSFET DEVICES; THRESHOLD VOLTAGE;

CIRCUIT SIMULATION; REVERSE-SHORT-CHANNEL EFFECT;

ELECTRIC NETWORK SYNTHESIS;

EID: 0035471977     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.954493     Document Type: Article

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