Ultra-thin-body fully depleted SOI metal source/drain n-MOSFETs and ITRS low-standby-power targets through 2018

Technical Digest - International Electron Devices Meeting, IEDM

Volumn 2005, Issue , 2005, Pages 972-975

  Connelly, Daniel ^a   Clifton, Paul ^a   Faulkner, Carl ^a   Grupp, D E ^a  

^a Acorn Technologies   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BARRIER HEIGHT; N-CHANNEL MOSFET DEVICES; SOURCE/DRAIN PROFILE;

DRAIN CURRENT; SCHOTTKY BARRIER DIODES; SILICON ON INSULATOR TECHNOLOGY; SPECIFICATIONS; ULTRATHIN FILMS;

MOSFET DEVICES;

EID: 33847748948     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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