Impact of NBTI-driven parameter degradation on lifetime of a 90nm p-MOSFET

IEEE International Integrated Reliability Workshop Final Report

Volumn 2005, Issue , 2005, Pages 99-102

  Wittmann, R ^a   Puchner, H ^b   Hinh, L ^b   Ceric, H ^a   Gehring, A ^a   Selberherr, S ^a  

^a INSTITUTE FOR MICROELECTRONICS   (Austria)

^b CYPRESS SEMICONDUCTOR   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; COMPUTER SIMULATION; HYDROGEN; INTERFACES (MATERIALS); MOSFET DEVICES; NATURAL FREQUENCIES;

ELECTRICAL STABILITY; GATE OXIDE; REACTION-DIFFUSION;

RELIABILITY THEORY;

EID: 33847727471     PISSN: 19308841     EISSN: 23748036     Source Type: Conference Proceeding    
DOI: 10.1109/IRWS.2005.1609573     Document Type: Conference Paper

References (12)

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