Modeling of NBTI degradation and its impact on electric field dependence of the lifetime

Annual Proceedings - Reliability Physics (Symposium)

Volumn , Issue , 2004, Pages 23-27

  Aono, H ^a   Murakami, E ^a   Okuyama, K ^a   Nishida, A ^a   Minami, M ^a   Ooji, Y ^a   Kubota, K ^a  

^a RENESAS TECHNOLOGY CORP   (Japan)

Author keywords

Degradation saturation; Eox power law; Negative Bias Temperature Instability; pMOSFET

Indexed keywords

ANNEALING; DATA ACQUISITION; DEGRADATION; ELECTRIC FIELDS; ELECTRODES; MATHEMATICAL MODELS; STRESSES; THRESHOLD VOLTAGE;

DEGRADATION SATURATION; EOX POWER-LAW; NEGATIVE BIAS TEMPERATURE INSTABILITY (NBTI); PMOSFET;

MOSFET DEVICES;

EID: 3042511471     PISSN: 00999512     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (8)

1. N.Kimizuka, et. al., Symp. on VLSI Technol., p.73 (1999), p.92 (2000)
2. S.Ogawa, et al., Phys. Rev 7, p.4218 (1995)
3. G.La Rosa et al., IRPS, p. 282 (1997)
4. T.Yamamoto et al., IEEE Trans. ED-46, p. 921 (1999)
5. A.Suzuki, et al., Symp. on VLSI Technol., p. 216(2002)
6. A.T.Krishnan et al., IEDM p.865 (2001)
7. K.O. Jeppson, and C.M.Svensson, J. Appl. phys., p.2004 (1977)
8. C.Hu et al., IEEE Trans on Electron Device., Vol.32 p.375 (1985)