0.7-2.7-GHz 12-W power-amplifier MMIC developed using MLP technology

IEEE Transactions on Microwave Theory and Techniques

Volumn 55, Issue 2, 2007, Pages 222-229

  Bahl, Inder J ^a,b  

^a IEEE   (United States)

^b M/A COM   (United States)

Author keywords

Broadband power amplifiers; High power amplifiers (HPAs); MESFET HPAs; Monolithic microwave integrated circuit (MMIC) HPAs; Two octave HPAs

Indexed keywords

BROADBAND POWER AMPLIFIERS; HIGH POWER AMPLIFIERS (HPA); MESFET HPA; TWO OCTAVE HPA;

BROADBAND AMPLIFIERS; ELECTRIC LOSSES; MESFET DEVICES; NATURAL FREQUENCIES; POWER AMPLIFIERS;

MONOLITHIC MICROWAVE INTEGRATED CIRCUITS;

EID: 33847722704     PISSN: 00189480     EISSN: None     Source Type: Journal    
DOI: 10.1109/TMTT.2006.889151     Document Type: Article

References (29)

1. Y. Ayasi et al., "A monolithic GaAs 1-13 GHz traveling-wave amplifier," IEEE Trans. Microw. Theory Tech., vol. MTT-30, no. 7, pp. 976-981, Jul. 1982.
2. J. P. Fraysse et al., "A 2 W, high efficiency, 2-8 GHz, cascode HBT MMIC power distributed amplifier," in IEEE MTT-S Int. Microw. Symp. Dig., 2000, pp. 529-532.
3. J. J. Xu et al., "A 3-10-GHz GaN-based flip-chip integrated broadband power amplifier," IEEE Trans. Microw. Theory Tech., vol. 48, no. 12, pp. 2573-2578, Dec. 2000.
4. A. Sayed and G. Boeck, "Two-stage ultrawide-band 5-W power amplifier using SiC MESFET," IEEE Trans. Microw. Theory Tech., vol. 53, no. 7, pp. 2441-2449, Jul. 2005.
5. D. Conway, M. Fowler, and J. Redus, "New process enables wideband high-power GHz amplifiers to deliver up to 20 W," Defense Electron., Overland Park, KS, Feb. 2006, pp. 8-11.
6. C. Duperrier, M. Campovecchio, L. Roussel, M. Lajugie, and R. Quere, "New design method of non-uniform distributed power amplifiers. Application to a single stage 1 W PHEMT MMIC," in IEEE MTT-S Int. Microw. Symp. Dig., 2001, vol. 2, pp. 1063-1066.
7. _, "New design method of uniform and nonuniform power amplifiers," IEEE Trans. Microw. Theory Tech., vol. 49, no. 12, pp. 2494-2500, Dec. 2001.
8. A. E. Geissberger, I. J. Bahl, E. L. Griffin, and R. A. Sadler, "A new refractory self-aligned gate technology for GaAs microwave power FETs and MMICs," IEEE Trans. Electron. Devices, vol. 35, no. 5, pp. 615-622, May 1988.
9. I. J. Bahl et al., "Class-B power MMIC amplifiers with 70% power-added efficiency," IEEE Trans. Microw. Theory Tech., vol. 37, no. 9, pp. 1315-1320, Sep. 1989.
10. _, "C-band 10 W MMIC class-A amplifier manufactured using the refractory SAG process," IEEE Trans. Microw. Theory Tech., vol. 37, no. 12, pp. 2154-2158, Dec. 1989.
11. _, "Multifunction SAG process for high-yield low cost GaAs microwave integrated circuits," IEEE Trans. Microw. Theory Tech., vol. 38, no. 9, pp. 1175-1182, Sep. 1990.
12. W. L. Pribble and E. L. Griffin, "An ion-implanted 13 watt C-band MMIC with 60% peak power added efficiency," in IEEE Microw. Millimeter-Wave Monolithic Circuits Symp. Dig., 1996, pp. 25-28.
13. E. L. Griffin, "X"-band GaAs MMIC size reduction and integration," in IEEE MTT-S Int. Microw. Symp. Dig., 2000, pp. 709-712.
14. I. J. Bahl, "Design of a generic 2.5 W, 60 percent bandwidth, C-band MMIC amplifier," Microw. J., vol. 45, pp. 54-70, Aug. 2002.
15. M. Ashman and I. Bahl, "High performance wideband MSAG gain block/driver amplifier MMICs using MLP technology," Microw. J., vol. 47, pp. 74-88, Dec. 2004.
16. I. Bahl, "MESFET process yields MMIC K a-band PAs,"Microw. RF, vol. 44, pp. 96-112, May 2005.
17. H. F. Cooke, "Precise technique finds FET thermal resistance," Microw. RF, pp. 85-87, Aug. 1986, correction of this paper in Microw. RF, p. 13, Feb. 1987.
18. I. J. Bahl et al., "Low loss multilayer microstrip line for monolithic microwave integrated circuits applications," Int. J. RF Microw. Comp.-Aided Eng., vol. 8, pp. 441-454, Nov. 1998.
19. I. J. Bahl, "High current capacity multilayer inductors for RF and microwave circuits," Int. J. RF Microw. Comput.-Aided Eng., vol. 10, pp. 139-146, Mar. 2000.
20. _, "High-Q and low-loss matching network elements for RF and microwave circuits," IEEE Micro, vol. 1, pp. 64-73, Sep. 2000.
21. I. Bahl, Lumped Elements for RF and Microwave Circuits. Norwood, MA: Artech House, 2003.
22. R. G. Freitag et al., "Stability and improved circuit modeling considerations for high power MMIC amplifiers," in IEEE Microw. Millimeter-Wave Monolithic Circuits Symp. Dig., 1988, pp. 125-128.
23. M. Ohtomo, "Stability analysis and numerical simulation of multidevice amplifiers," IEEE Trans. Microw. Theory Tech., vol. 41, no. 6, pp. 983-991, Jun./Jul. 1993.
24. S. C. Cripps, RF Power Amplifiers for Wireless Communications. Norwood, MA: Artech House, 1999.
25. E. L. Griffin, "Application of loadline simulation to microwave high power amplifiers," IEEE Micro, vol. 1, pp. 58-66, Jun. 2000.
26. K. Chang, I. Bahl, and V. Nair, RF and Microwave Circuit and Component Design for Wireless Systems. Hoboken, NJ: Wiley, 2002, ch. 11.
27. I. Bahl and P. Bhartia, Microwave Solid State Circuit Design, 2nd ed. Hoboken, NJ: Wiley, 2003, ch. 10.
28. I. J. Bahl, "Low loss matching (LLM) design technique for power amplifiers," IEEE Micro, vol. 5, pp. 66-71, Dec. 2004.
29. R. Goyal, Ed., High-Frequency Analog Integrated Circuit Design. Hoboken, NJ: Wiley, 1995, pp. 179-180.