Invited: X-band GaAs MMIC size reduction and integration

IEEE MTT-S International Microwave Symposium Digest

Volumn 2, Issue , 2000, Pages 709-712

  Griffin, Edward L ^a  

^a M/A COM   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHIP AREA REDUCTION; GALLIUM ARSENIDE X BAND MONOLITHIC MICROWAVE INTEGRATED CIRCUITS;

COST EFFECTIVENESS; DIGITAL CONTROL SYSTEMS; INTEGRATED CIRCUIT MANUFACTURE; MICROPROCESSOR CHIPS; PHASE SHIFTERS; SEMICONDUCTING GALLIUM ARSENIDE; WAVEGUIDE ATTENUATORS;

MONOLITHIC MICROWAVE INTEGRATED CIRCUITS;

EID: 0033677981     PISSN: 0149645X     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Article

References (3)

1. I.J. Bahl, et al., "Multifunction SAG Process for High-Yield, Low-Cost GaAs Microwave Circuits," IEEE MTT-38, pp. 1175-1182, Sep. 1990.
2. H.F. Cooke, Precise Technique Finds E T Thermal Resistance," Microwave and RF, pp. 85-87, Aug. 1986.
3. W.L. Pribble and E.L. Griffin, "An Ion-implanted 13-Watt C-Band MMIC with 60% Peak Power-Added Efficiency," IEEE 1996 Microwave mm Mono. Cir. Symp. Dig., pp 25-28.