Low loss matching (LLM) design technique for power amplifiers

IEEE Microwave Magazine

Volumn 5, Issue 4, 2004, Pages 66-71

  Bahl, Inder J ^a  

^a M/A COM   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DISSIPATIVE LOSS (DL); LOW LOSS MATCHING (LLM); MISMATCH LOSS (ML); PASSIVE NETWORK;

BANDWIDTH; COMPUTATIONAL METHODS; ELECTRIC CURRENTS; ELECTRIC IMPEDANCE; ELECTRIC POTENTIAL; ENERGY DISSIPATION; INTEGRATED CIRCUITS; MATHEMATICAL MODELS; MESFET DEVICES; NETWORKS (CIRCUITS);

BROADBAND AMPLIFIERS;

EID: 12344319004     PISSN: 15273342     EISSN: None     Source Type: Trade Journal    
DOI: 10.1109/MMW.2004.1380279     Document Type: Article

References (8)

1. S.C. Cripps, RF Power Amplifiers for Wireless Communications. Norwood, MA: Artech House, 1999.
2. E.L. Griffin, "Application of leadline simulation to microwave high power amplifiers," IEEE Microwave Mag., vol. 1, pp. 58-66, June 2000.
3. K. Chang, I. Bahl, and V. Nair, RF and Microwave Circuit and Component Design for Wireless Systems. New York: Wiley, 2002, ch. 11.
4. I. Bahl and P. Bhartia, Microwave Solid State Circuit Design, 2nd ed. New York: Wiley, 2003, ch. 10.
5. A.E. Geissberger, R.A. Sadler, E.L. Griffin, I.J. Bahl, and ML. Balzan, "Refractory self-aligned gate technology for GaAs microwave FETs and MMICs," IEEE Trans. Electron. Devices, vol. 35, pp. 615-622, May 1988.
6. A.E. Geissberger, I.J. Bahl, E.L. Griffin, and R.A.K Sadler, "A new refractory self-aligned gate technology for GaAs microwave power FETs and MMICs," IEEE Trans. Electron. Devices, vol. 35, pp. 615-622, May 1988.
7. I.J. Bahl, M.J. Drinkwine, A.E. Geissberger, E.L. Griffin, and J.A. Grzyb, "Multifunction SAG process for high-yield, low cost GaAs microwave integrated circuits," IEEE Trans. Microwave Theory Tech., vol. 38, pp. 1175-1182, Sept. 1990.
8. I. Bahl, Lumped Elements for RF and Microwave Circuits. Norwood, MA: Artech, 2003, ch. 3.