2W, high efficiency, 2-8GHz, cascode HBT MMIC power distributed amplifier

IEEE MTT-S International Microwave Symposium Digest

Volumn 1, Issue , 2000, Pages 529-532

  Fraysse, J Ph ^a   Viaud, J P ^a   Campovecchio, M ^a   Auxemery, Ph ^a   Quere, R ^a  

^a UNIVERSITY OF LIMOGES   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CASCODE CELL; COMMON EMITTER TRANSISTOR; POWER DISTRIBUTED AMPLIFIER;

CAPACITANCE; COMPUTER SIMULATION; ELECTRIC IMPEDANCE; ELECTRIC POTENTIAL; HETEROJUNCTION BIPOLAR TRANSISTORS; INTEGRATED CIRCUIT LAYOUT; MONOLITHIC MICROWAVE INTEGRATED CIRCUITS; OPTIMIZATION; SCATTERING PARAMETERS;

POWER AMPLIFIERS;

EID: 0033677934     PISSN: 0149645X     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Article

References (6)

1. F. Ali and Al "A 25 Ohm, 2W 8-14GHz HBT Power MMIC with 20 dB Gain and 40% Power Added Eficiency" IEEE MMWMC, pp. 113-115,1994
2. M. Salib and Al "A robust 3W High Efficiency 8-14GHz GaAs/AIGaAs Heterojunction Bipolar Transistor Power Amplifier" IEEE MTT-S Digest, pp. 581-584, 1998
3. J.-M. SALIB and Al "A 1.8W 6-18-GHz HBT MMIC Power Amplifter with 10-dB Gain and 37% Peak Power-Added Aficiency" IEEE Microwave Guided Wave Letter, vol. 3, pp. 325-326, Sept. 1993
4. J. P. Viaud and Al "First Demonstration of a 0.5K 2 To 8GHz MMIC HBT Distributed Power Amplifier Based On a Large Signal Design Approach " IEEE MTT-S Digest, pp. 893-896,1997
5. M. Campovecchio and al "Optimum Design of Distributed Power-fet Amplifters. Application to a 2-18GHz MMIC Module Exhibiting Improved Power Performances", IEEE MMWMC, pp. 125-128,1994
6. J. Ph. Fraysse and al "A Non-Quasi-Static Model of GaInP/GaAs HBT for Power Applications " IEEE MTT-S Digest, 1997