Nucleation of AlN on SiC substrates by seeded sublimation growth

Journal of Crystal Growth

Volumn 300, Issue 2, 2007, Pages 336-342

  Lu, P ^a   Edgar, J H ^a   Lee, R G ^b   Chaudhuri, J ^b  

^a Kansas State University   (United States)

^b Texas Tech University   (United States)

Author keywords

A1. Nucleation; A2. Growth from vapor; B1. Nitrides

Indexed keywords

EPILAYERS; LATTICE CONSTANTS; NITRIDES; NUCLEATION; SILICON CARBIDE; SUBLIMATION;

DISLOCATION DENSITY; GROWTH FROM VAPOR; SUBSTRATE MISORIENTATION; THREADING DISLOCATIONS;

ALUMINUM COMPOUNDS;

EID: 33847698553     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2006.11.324     Document Type: Article

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