Source-gated transistors in hydrogenated amorphous silicon

Solid-State Electronics

Volumn 48, Issue 7, 2004, Pages 1155-1161

  Shannon, J M ^a,b   Gerstner, E G ^a,c  

^a UNIVERSITY OF SURREY   (United Kingdom)

^b PHILIPS RESEARCH LABORATORIES   (Netherlands)

^c Nature   (United Kingdom)

Author keywords

Field effect transistor; Hydrogenated amorphous silicon; Schottky barrier; Unipolar transistor

Indexed keywords

HYDROGENATED AMORPHOUS SILICON; UNIPOLAR TRANSISTORS;

AMORPHOUS SILICON; ELECTRIC CONDUCTIVITY; ELECTRIC CURRENTS; ELECTRIC INSULATORS; ELECTRIC POTENTIAL; ELECTRIC RESISTANCE; FIELD EFFECT TRANSISTORS; HYDROGENATION; SCHOTTKY BARRIER DIODES; SEMICONDUCTOR MATERIALS;

GATES (TRANSISTOR);

EID: 1842843659     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2004.02.004     Document Type: Article

References (12)

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