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Volumn 431, Issue 1-2, 2007, Pages 32-36

Growth and anisotropy of transport properties of detached Cd0.78Zn0.22Te crystals

Author keywords

Anisotropy; CdZnTe; Crystal growth; Detachment; Semiconductors; Transport properties

Indexed keywords

ANISOTROPY; CRYSTAL GROWTH; ELECTRIC CONDUCTIVITY; RELAXATION PROCESSES; SOLIDIFICATION; THERMAL EFFECTS;

EID: 33847299546     PISSN: 09258388     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jallcom.2006.05.042     Document Type: Article
Times cited : (10)

References (39)
  • 8
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    • H. Hermon, M. Scheiber, R.B. James, N.N. Kolesnikov, Yu. N. Ivanov, V. Komar, M.S. Goorsky, H.Yoon, J. Toney, T.E. Schlesinger, in: R.B. James, T.E. Schlesinger, P. Siffert, W. Dusi, M. Squillante, M. O'Connell, M. Cuzin, (Eds.), vol. 487, Materials Research Society, Pittsburgh, PA, 1998, p. 256.
  • 20
    • 33847324755 scopus 로고    scopus 로고
    • G.A. Gamal, Egypt. J. Sol., in press.
  • 27
    • 0004278611 scopus 로고
    • Hannay N.H. (Ed), Reinhold, New Yourk
    • Garret C.G.B. In: Hannay N.H. (Ed). Semiconductors (1959), Reinhold, New Yourk
    • (1959) Semiconductors
    • Garret, C.G.B.1
  • 32
    • 33847312709 scopus 로고    scopus 로고
    • N. Magnea, J.L. Pautrat, Properties of Narrow Gap Semiconductors, in: P capper (ed.), London: INSPEC, the institution of Electrical Engineers, 10 (1994) 399.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.