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Journal of Crystal Growth

Volumn 234, Issue 1, 2002, Pages 91-98

Detached growth of gallium doped germanium

(3) Dold, P a Szofran, F R b Benz, K W a

a UNIVERSITY OF FREIBURG (Germany)

b NASA MARSHALL SPACE FLIGHT CENTER (United States)

Author keywords

A2. Bridgman technique; A2. De wetting; A2. Detached Bridgman; B2. Semiconducting germanium

Indexed keywords

CRYSTAL GROWTH; CRYSTAL ORIENTATION; ETCHING; GALLIUM; SEMICONDUCTOR DOPING;

ETCH PIT DENSITY;

SEMICONDUCTING GERMANIUM;

EID: 0036127771 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/S0022-0248(01)01659-1 Document Type: Article

Times cited : (26)

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