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Volumn 15, Issue 6, 2000, Pages 561-564

Determination of energy gap in Cd1-xZnxTe (x = 0-0.06)

Author keywords

[No Author keywords available]

Indexed keywords

ABSORPTION SPECTROSCOPY; BINDING ENERGY; ENERGY GAP; EXCITONS; INFRARED SPECTROSCOPY; LATTICE CONSTANTS; PHOTOLUMINESCENCE; SINGLE CRYSTALS; X RAY DIFFRACTION ANALYSIS;

EID: 0342955651     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/15/6/313     Document Type: Article
Times cited : (37)

References (23)
  • 14
    • 0342270712 scopus 로고
    • ed P Capper (London: INSPEC, The Institution of Electrical Engineers)
    • Magnea N and Pautrat J L 1994 Properties of Narrow Gap Semiconductors vol 10, ed P Capper (London: INSPEC, The Institution of Electrical Engineers) p 399
    • (1994) Properties of Narrow Gap Semiconductors , vol.10 , pp. 399
    • Magnea, N.1    Pautrat, J.L.2
  • 19
    • 0003701341 scopus 로고
    • ed P Capper (London: INSPEC, The Institution of Electrical Engineers)
    • Williams D J 1994 Properties of Narrow Gap Semiconductors vol 10, ed P Capper (London: INSPEC, The Institution of Electrical Engineers) p 399
    • (1994) Properties of Narrow Gap Semiconductors , vol.10 , pp. 399
    • Williams, D.J.1
  • 22
    • 0342270711 scopus 로고
    • ed P Capper (London: INSPEC, The Institution of Electrical Engineers)
    • Granger R 1994 Properties of Narrow Gap Semiconductors vol 10, ed P Capper (London: INSPEC, The Institution of Electrical Engineers) p 312
    • (1994) Properties of Narrow Gap Semiconductors , vol.10 , pp. 312
    • Granger, R.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.