Drift mobility measurements on undoped Cd0.9Zn0.1Te grown by high-pressure Bridgman technique

Journal of Crystal Growth

Volumn 214, Issue , 2000, Pages 909-912

  Suzuki, K ^a   Iwata, A ^a   Seto, S ^b   Sawada, T ^a   Imai, K ^a  

^a HOKKAIDO INSTITUTE OF TECHNOLOGY   (Japan)

^b ISHIKAWA NATIONAL COLLEGE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER MOBILITY; CRYSTAL GROWTH; ELECTRON SCATTERING; ELECTRON TRANSPORT PROPERTIES; ITERATIVE METHODS; TEMPERATURE;

BOLTZMANN EQUATION; ELECTRON DRIFT MOBILITY; HIGH PRESSURE BRIDGMAN METHOD; TIME OF FLIGHT TECHNIQUE;

CADMIUM COMPOUNDS;

EID: 0033691833     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(00)00252-9     Document Type: Article

References (11)

1. Eisen Y., Shor A. J. Crystal Growth. 184/185:1998;1302.
2. Zerrai A., Cherkaoui K., Marrakchi G., Brémond G., Fougéres P., Hage-Ali M., Koeble J.M., Siffert P. J. Crystal Growth. 197:1999;646.
3. Verger L., Baffert N., Rosaz M., Rustique J. Nucl. Inst. and Meth. A. 380:1996;121.
4. Burshtein Z., Jayatirtha H.N., Burger A., Butler J.F., Apotovsky B., Doty F.P. Appl. Phys. Lett. 63:1993;102.
5. Suzuki K., Seto S., Tanaka A., Kawashima M. J. Crystal Growth. 101:1990;859.
6. Suzuki K., Seto S., Dairaku S., Takojima N., Sawada T., Imai K. J. Electron. Mater. 25:1996;1241.
7. Fiederlle M., Feltgen T., Meinhardt J., Benz K.W. J. Crystal Growth. 197:1999;635.
8. Rode D.L. Phys Rev. B. 24:1970;1012.
9. Chattopadhyay D. Solid State Commun. 91:1994;149.
10. Sze S.M. Physics of Semiconductor Devices. 2nd Edition:1981;Wiley, New York.
11. Harrison J.W., Hauser J.R. Phys. Rev. B. 13:1976;5374.