Niobium doping effects and ferroelectric relaxor behavior of bismuth lantanium titanate

Journal of Electroceramics

Volumn 17, Issue 2-4, 2006, Pages 129-133

  Kim, Jin Soo ^a   Jang, Min Su ^a   Kim, Ill Won ^b   Lee, Kwang Sei ^c  

^a Pusan National University   (South Korea)

^b University of Ulsan   (South Korea)

^c Inje University   (South Korea)

Author keywords

BIT; BLSF; BLT; Dielectric relaxation; Ferroelectrics; FRAM; Relaxor

Indexed keywords

BISMUTH COMPOUNDS; DIELECTRIC RELAXATION; DOPING (ADDITIVES); NIOBIUM; PERMITTIVITY; SOLID SOLUTIONS; X RAY DIFFRACTION;

FERROELECTRIC RELAXOR; PHASE TRANSITION TEMPERATURE;

FERROELECTRIC MATERIALS;

EID: 33847281457     PISSN: 13853449     EISSN: 15738663     Source Type: Journal    
DOI: 10.1007/s10832-006-5410-9     Document Type: Conference Paper

References (22)

1. K. Kato, C. Zheng, J.M. Finder, S.K. Dey, and Y. Torii, J. Am. Ceram. Soc., 81, 1869 (1998).
2. B.H. Park, B.S. Kang, S.D. Bu, T. W. Noh, J.Lee, and W. Jo, Nature, 401, 682 (1999).
3. J.S. Kim, S.S. Kim, and T.K. Song, Jour. Kor. Phys. Soc., 43, 548 (2003).
4. I.W. Kim, C.W. Ahn, J.S. Kim, J.-S. Bae, B.C.C, J.-H. Jeong, and J.S. Lee, Appl. Phys. Lett., 80, 4006 (2002).
5. J.S. Kim, S.S. Kim, and J.K. Kim, Jpn. J. Appl. Phys., 42, 6486 (2003).
6. T. Watanabe, H. Funakubo, M. Osada, Y. Noguchi, and M. Miyayama, Appl. Phys. Lett., 10, 100 (2002).
7. J.S. Kim, H.J. Lee, S.H. Kang, S.Y. Lee, and I.W. Kim, Integrated Ferroelectric, 65, 39 (2004).
8. Y. Noguchi, I. Miwa, Y. Goshima, and M. Miyayama, Jpn. J. Appl. Phys., 39, L1259 (2000).
9. D. Wu, A. Li, T. Zhu, Z. Liu, and N. Ming, J. Appl. Phys., 88, 5941 (2000).
10. J.S. Kim, H.J. Lee, S.Y. Lee, S.H. Kang, C.W. Ahn, I.W. Kim, K.S Lee, and H.S. Lee, Jour. Kor. Phys. Soc., 46, 147 (2005).
11. U. Chon, K. Kim, H.M. Jang, and O. Yi, Appl. Phys. Lett., 79, 3137 (2001).
12. Y. Wu, M.J. Forbess, S. Seraji, S.J. Limmer, T.P. Chou, C. Nguyen, and G. Cao, J. Appl. Phys., 90, 5296 (2001).
13. Y. Shimakawa, Y. Kubo, Y. Tauchi, T. Kamiyama, H. Asano, and F. Izumi, Appl. Phys. Lett., 77, 2749 (2000).
14. M. Li, T. Chong, X. Xu, and H. Kumagai, Appl. Phys. Lett., 89, 5644 (2001).
15. J.S. Kim and J.N. Kim, J. Phys. Soc. Jpn., 69, 1880 (2000).
16. M.M. Kumar and Z.-G. Ye, J. Appl. Phys., 90, 934 (2001).
17. A.M. Glass, J. Appl. Phys., 40, 4699 (1969).
18. L.E. Cross, Ferroelectrics, 76, 241 (1987).
19. J.S. Kim, H.J. Lee, S.Y. Lee, S.H. Kang, C.W. Ahn, I.W. Kim, K.S. Lee, J. Korean Phys. Soc., 46, 143 (2005).
20. C.H. Song, W. Li, J. Ma, J. Gu, Y.Y. Yao, Y. Feng, X.M. Lu, J.S. Zhu, Y.N. Wang, W.L.H. Chan, and C.L. Choy, Solid State. Comm., 129, 775 (2004).
21. J.S. Kirn, H.J. Lee, S.H. Kang, S.Y. Lee, and I.W. Kim, Intergr. Ferroelectrics, 65, 39 (2004).
22. J.S. Kim and S.S. Kim, Appl. Phys. A, 81, 1427 (2005).