Ferroelectric properties of Bi3.25-x/3La0.75Ti 3-xNbxO12 films prepared by pulsed laser deposition

Solid State Communications

Volumn 129, Issue 12, 2004, Pages 775-780

  Song, C H ^a   Li, W ^a   Ma, J ^a   Gu, J ^a   Yao, Y Y ^a   Feng, Y ^a   Lu, X M ^a   Zhu, J S ^a   Wang, Y N ^a   Chan, W L H ^b   Choy, C L ^b  

^a NANJING UNIVERSITY   (China)

^b HONG KONG POLYTECHNIC UNIVERSITY   (Hong Kong)

Author keywords

D. Ferroelectric properties

Indexed keywords

ACTIVATION ENERGY; CERAMIC MATERIALS; CRYSTAL ORIENTATION; FATIGUE OF MATERIALS; FERROELECTRICITY; FREQUENCIES; HYSTERESIS; LANTHANUM; POLARIZATION; PULSED LASER DEPOSITION; RANDOM ACCESS STORAGE; SWITCHING; THIN FILMS; X RAY DIFFRACTION ANALYSIS;

FATIGUE RESISTANCE; FERROELECTRIC PROPERTIES;

BISMUTH COMPOUNDS;

EID: 10744221019     PISSN: 00381098     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.ssc.2003.12.030     Document Type: Article

References (25)

1. Scott J.F., et al. Science. 246:1989;1400.
2. Paz de Araujo C.A., et al. Nature (London). 374:1995;12.
3. Joshi P.C., et al. Appl. Phys. Lett. 62:(16):1993;1928.
4. Watanabe T., et al. J Appl. Phys. 92:2002;1518.
5. Park B.H., et al. Nature (London). 401:1999;682.
6. Kojima T., et al. Appl. Phys. Lett. 80:2002;2746.
7. Bao Z.H., et al. Mater. Lett. 56:2002;861.
8. Noguchi Y., et al. Appl. Phys. Lett. 78:2001;1903.
9. Watanabe T., et al. Appl. Phys. Lett. 80:2002;100.
10. Uchida H., et al. Appl. Phys. Lett. 81:2002;2229.
11. Wang X.S., et al. Appl. Phys. Lett. 82:2003;2479.
12. Watanabe T., et al. J. Appl. Phys. 90:2001;6533.
13. Uchida H., et al. Jpn. Soc. Appl. Phys. Part 1. 11B:2002;6820.
14. Wang D.Y., et al. Int. Ferroelectr. 45:2002;161.
15. Noguchi Y., et al. Jpn. J. Appl. Phys. Part 2. 39:2000;L1259.
16. Friessnegg T., et al. Appl. Phys. Lett. 77:2000;127.
17. Ding Y., et al. Appl. Phys. Lett. 78:2001;4175 Ding Y., et al. Appl. Phys. Lett. 79:2001;1015.
18. Ding Y., et al. Appl. Phys. Lett. 78:2001;4175 Ding Y., et al. Appl. Phys. Lett. 79:2001;1015.
19. Su D., et al. J. Appl. Phys. 93:2003;4784.
20. Chu M.W., et al. J. Appl. Phys. 91:2002;3178.
21. Shulman H.S., et al. J. Am. Ceram. Soc. 83:(3):2000;528.
22. Chon U., et al. Appl. Phys. Lett. 79:2001;3137.
23. Noguchi Y., et al. Appl. Phys. Lett. 78:2001;1903.
24. Kim S.S., et al. J. Appl. Phys. 92:2002;2213.
25. Zhu J.S., et al. Appl. Phys. Lett. 79:2001;3827.