Broken-gap heterojunction in the p-GaSb-n-InAs1-xSbx (0 ≤ x ≤ 0.18) system

Technical Physics Letters

Volumn 27, Issue 11, 2001, Pages 964-966

  Kizhaev, S S ^a   Molchanov, S S ^a   Zotova, N V ^a   Grebenshchikova, E A ^a   Yakovlev, Yu P ^a   Hulicius, E ^b   Simecek T ^b   Melichar, K ^b   Pangrac J ^b  

^a IOFFE INSTITUTE   (Russian Federation)

^b INSTITUTE OF PHYSICS   (Czech Republic)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0035511519     PISSN: 10637850     EISSN: None     Source Type: Journal    
DOI: 10.1134/1.1424407     Document Type: Article

References (7)

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