-
3
-
-
0037091440
-
-
R. Magri and A. Zunger, Phys. Rev. B 0163-1829 10.1103/PhysRevB.65. 165302 65, 165302 (2002); R. Magri and A. Zunger, Phys. Rev. B 0163-1829 10.1103/PhysRevB.64.081305 64, 081305 (R) (2001); R. Magri and A. Zunger, Phys. Rev. B 68, 155329 (2003).
-
(2002)
Phys. Rev. B
, vol.65
, pp. 165302
-
-
Magri, R.1
Zunger, A.2
-
4
-
-
0035880936
-
-
R. Magri and A. Zunger, Phys. Rev. B 0163-1829 10.1103/PhysRevB.65. 165302 65, 165302 (2002); R. Magri and A. Zunger, Phys. Rev. B 0163-1829 10.1103/PhysRevB.64.081305 64, 081305 (R) (2001); R. Magri and A. Zunger, Phys. Rev. B 68, 155329 (2003).
-
(2001)
Phys. Rev. B
, vol.64
, pp. 081305
-
-
Magri, R.1
Zunger, A.2
-
5
-
-
18244427585
-
-
R. Magri and A. Zunger, Phys. Rev. B 0163-1829 10.1103/PhysRevB.65. 165302 65, 165302 (2002); R. Magri and A. Zunger, Phys. Rev. B 0163-1829 10.1103/PhysRevB.64.081305 64, 081305 (R) (2001); R. Magri and A. Zunger, Phys. Rev. B 68, 155329 (2003).
-
(2003)
Phys. Rev. B
, vol.68
, pp. 155329
-
-
Magri, R.1
Zunger, A.2
-
6
-
-
0035905291
-
-
C. W. Leitz, M. T. Currie, M. L. Lee, Z.-Y. Cheng, D. A. Antoniadis, and E. A. Fitzgerald, Appl. Phys. Lett. 79, 4246 (2001).
-
(2001)
Appl. Phys. Lett.
, vol.79
, pp. 4246
-
-
Leitz, C.W.1
Currie, M.T.2
Lee, M.L.3
Cheng, Z.-Y.4
Antoniadis, D.A.5
Fitzgerald, E.A.6
-
9
-
-
0000993122
-
-
C. Pryor, J. Kim, L. W. Wang, A. J. Williamson, and A. Zunger, J. Appl. Phys. 83, 2548 (1996).
-
(1996)
J. Appl. Phys.
, vol.83
, pp. 2548
-
-
Pryor, C.1
Kim, J.2
Wang, L.W.3
Williamson, A.J.4
Zunger, A.5
-
10
-
-
25144502234
-
-
edited by M. O.Manasreh (Gordon and Breach, New York
-
G. W. Turner and H. K. Choi, in Antimonide-Related Strained-Layer Heterostructures, edited by, M. O. Manasreh, (Gordon and Breach, New York, 1997), p. 369.
-
(1997)
Antimonide-Related Strained-Layer Heterostructures
, pp. 369
-
-
Turner, G.W.1
Choi, H.K.2
-
15
-
-
0001423182
-
-
R. Magri, L. L. Wang, A. Zunger, I. Vurgaftman, and J. R. Meyer, Phys. Rev. B 61, 10235 (2000).
-
(2000)
Phys. Rev. B
, vol.61
, pp. 10235
-
-
Magri, R.1
Wang, L.L.2
Zunger, A.3
Vurgaftman, I.4
Meyer, J.R.5
-
16
-
-
0003554309
-
-
Landolt-Börnstein, New Series, Group III, Vol. edited by O.Madelung (Springer, Berlin
-
Semiconductors: Group IV and III-V Compounds, Landolt-Börnstein, New Series, Group III, Vol. 17, edited by, O. Madelung, (Springer, Berlin, 1982); Semiconductors: Intrinsic Properties of Group IV Elements and III-V, II-VI and I-VII Compounds, Landolt-Börnstein, New Series, Group III, Vol. 22, edited by, O. Madelung, (Springer, Berlin, 1987).
-
(1982)
Semiconductors: Group IV and III-V Compounds
, vol.17
-
-
-
17
-
-
0005688480
-
-
Landolt-Börnstein, New Series, Group III, Vol. edited by O.Madelung (Springer, Berlin
-
Semiconductors: Group IV and III-V Compounds, Landolt-Börnstein, New Series, Group III, Vol. 17, edited by, O. Madelung, (Springer, Berlin, 1982); Semiconductors: Intrinsic Properties of Group IV Elements and III-V, II-VI and I-VII Compounds, Landolt-Börnstein, New Series, Group III, Vol. 22, edited by, O. Madelung, (Springer, Berlin, 1987).
-
(1987)
Semiconductors: Intrinsic Properties of Group IV Elements and III-V, II-VI and I-VII Compounds
, vol.22
-
-
-
22
-
-
0032606774
-
-
G. C. Dente and M. L. Tilton, J. Appl. Phys. 0021-8979 10.1063/1.370905 86, 1420 (1999); G. C. Dente and M. L. Tilton, Phys. Rev. B 66, 165307 (2002).
-
(1999)
J. Appl. Phys.
, vol.86
, pp. 1420
-
-
Dente, G.C.1
Tilton, M.L.2
-
23
-
-
0037110015
-
-
G. C. Dente and M. L. Tilton, J. Appl. Phys. 0021-8979 10.1063/1.370905 86, 1420 (1999); G. C. Dente and M. L. Tilton, Phys. Rev. B 66, 165307 (2002).
-
(2002)
Phys. Rev. B
, vol.66
, pp. 165307
-
-
Dente, G.C.1
Tilton, M.L.2
-
27
-
-
0032484779
-
-
M. J. Yang, W. J. Moore, B. R. Bennett, and B. V. Shanabrook, Electron. Lett. 0013-5194 10.1049/el:19981221 34, 270 (1998); M. J. Yang, J. Appl. Phys. 86, 1796 (1999).
-
(1998)
Electron. Lett.
, vol.34
, pp. 270
-
-
Yang, M.J.1
Moore, W.J.2
Bennett, B.R.3
Shanabrook, B.V.4
-
28
-
-
0001400829
-
-
M. J. Yang, W. J. Moore, B. R. Bennett, and B. V. Shanabrook, Electron. Lett. 0013-5194 10.1049/el:19981221 34, 270 (1998); M. J. Yang, J. Appl. Phys. 86, 1796 (1999).
-
(1999)
J. Appl. Phys.
, vol.86
, pp. 1796
-
-
Yang, M.J.1
-
29
-
-
0043013346
-
-
C. L. Canedy, W. W. Bewley, C. S. Kim, M. Kim, I. Vurgaftman, and J. R. Meyer, J. Appl. Phys. 94, 1347 (2003).
-
(2003)
J. Appl. Phys.
, vol.94
, pp. 1347
-
-
Canedy, C.L.1
Bewley, W.W.2
Kim, C.S.3
Kim, M.4
Vurgaftman, I.5
Meyer, J.R.6
-
34
-
-
0009360311
-
-
F. Karouta, H. Mani, F. Jia Hua, and A. Jouillie, Rev. Phys. Appl. 22, 1459 (1987).
-
(1987)
Rev. Phys. Appl.
, vol.22
, pp. 1459
-
-
Karouta, F.1
Mani, H.2
Jia Hua, F.3
Jouillie, A.4
-
35
-
-
0022162183
-
-
J. C. DeWinter, M. A. Pollack, A. K. Srivastava, and J. L. Zyskind, J. Electron. Mater. 14, 729 (1985).
-
(1985)
J. Electron. Mater.
, vol.14
, pp. 729
-
-
Dewinter, J.C.1
Pollack, M.A.2
Srivastava, A.K.3
Zyskind, J.L.4
-
36
-
-
0022669342
-
-
M. J. Cherng, G. B. Stringfellow, D. W. Kisker, A. K. Srivastava, and J. L. Zyskind, Appl. Phys. Lett. 48, 419 (1986).
-
(1986)
Appl. Phys. Lett.
, vol.48
, pp. 419
-
-
Cherng, M.J.1
Stringfellow, G.B.2
Kisker, D.W.3
Srivastava, A.K.4
Zyskind, J.L.5
-
37
-
-
0022464968
-
-
M. Astles, H. Hill, A. J. Williams, P. J. Wright, and M. L. Young, J. Electron. Mater. 15, 41 (1986).
-
(1986)
J. Electron. Mater.
, vol.15
, pp. 41
-
-
Astles, M.1
Hill, H.2
Williams, A.J.3
Wright, P.J.4
Young, M.L.5
-
38
-
-
0031195432
-
-
J. Shin, T. C. Hsu, Y. Hsu, and G. B. Stringfellow, J. Cryst. Growth 179, 1 (1997).
-
(1997)
J. Cryst. Growth
, vol.179
, pp. 1
-
-
Shin, J.1
Hsu, T.C.2
Hsu, Y.3
Stringfellow, G.B.4
-
40
-
-
0035285784
-
-
T. I. Voronina, B. E. Zhurtanov, T. S. Lagunova, M. P. Mikhailova, K. D. Moiseev, A. E. Rozov, and Yu. P. Yakovlev, Semiconductors 35, 331 (2001).
-
(2001)
Semiconductors
, vol.35
, pp. 331
-
-
Voronina, T.I.1
Zhurtanov, B.E.2
Lagunova, T.S.3
Mikhailova, M.P.4
Moiseev, K.D.5
Rozov, A.E.6
Yakovlev, Yu.P.7
-
41
-
-
0000638161
-
-
K. D. Moiseev, A. A. Toropov, Ya. V. Terent'ev, M. P. Mikhailova, and Yu. P. Yakovlev, Semiconductors 34, 1432 (2000).
-
(2000)
Semiconductors
, vol.34
, pp. 1432
-
-
Moiseev, K.D.1
Toropov, A.A.2
Terent'ev, Ya.V.3
Mikhailova, M.P.4
Yakovlev, Yu.P.5
-
43
-
-
0028422296
-
-
X. Gong, H. Kan, T. Yamaguchi, I. Suzuki, M. Aoyama, M. Kumagawa, N. L. Rowell, A. Wang, and R. Rinfret, Jpn. J. Appl. Phys., Part 1 33, 1740 (1994).
-
(1994)
Jpn. J. Appl. Phys., Part 1
, vol.33
, pp. 1740
-
-
Gong, X.1
Kan, H.2
Yamaguchi, T.3
Suzuki, I.4
Aoyama, M.5
Kumagawa, M.6
Rowell, N.L.7
Wang, A.8
Rinfret, R.9
-
44
-
-
33749052002
-
-
A. Silverman, A. Zunger, R. Kalish, and J. Adler, Phys. Rev. B 51, 10795 (1995).
-
(1995)
Phys. Rev. B
, vol.51
, pp. 10795
-
-
Silverman, A.1
Zunger, A.2
Kalish, R.3
Adler, J.4
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