High temperature characterization of Si/SiGe resonant interband tunnel diodes

2005 International Semiconductor Device Research Symposium

Volumn 2005, Issue , 2005, Pages 153-154

  Pawlik, D J ^a   Sudirgo, S ^a   Kurinec, S K ^a   Thompson, P E ^b   Berger, P R ^c   Rommel, S L ^a  

^a Rochester Institute of Technology   (United States)

^b NAVAL RESEARCH LABORATORY   (United States)

^c The Ohio State University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 33847214545     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (7)

1. 0.5 Resonant Interband Tunneling Diodes," Appl. Phys. Lett., vol. 73, pp. 2191-2193, 1998.
2. N. Jin, S.-Y. Chung, A. T. Rice, P. R. Berger, P. E. Thompson, C. Rivas, R. Lake, S. Sudirgo, J. J. Kempisty, B. Curanovic, S. L. Rommel, K. D. Hirschman, S. K. Kurinec, P. H. Chi and D. S. Simons, "Diffusion Barrier Cladding in Si/SiGe Resonant Interband Tunneling Diodes And Their Patterned Growth on PMOS Source/Drain Regions," Special Issue on "Nanoelectronics" in IEEE Transactions on Electron Devices, vol. 50, pp. 1876-1884, Sept. 2003.
3. S. Sudirgo, R.P. Nandgaonkar, B. Curanovic, J.L. Hebding, R.L. Saxer, S.S. Islam, K.D. Hirschman, S.L. Rommel, S.K. Kurinec, P.E. Thompson, N. Jin, and P.R. Berger, "Monolithically Integrated Si/SiGe Resonant Interband Tunnel Diode/CMOS Demonstrating Low Voltage MOBILE Operation," Solid State Electronics, vol. 48, pp. 1907-1910 Oct./Nov. 2004.
4. M. W. Dashiell, R. T. Troeger, S. L. Rommel, T. N. Adam, P. R. Berger, C. Guedj, J. Kolodzey, A. C. Seabaugh, R. Lake, "Current-Voltage Characteristics of High Current Density Silicon Esaki Diodes Grown by Molecular Beam Epitaxy and the Influence of Thermal Annealing," IEEE Tran. on Elec. Dev., vol. 47, pp. 1707-1714, Sept. 2000.
5. J. Wang, D. Wheeler, Y. Yan, J. Zhao, S. Howard, and A. Seabaugh, "Silicon Tunnel Diodes Formed by Proximity Rapid Thermal Diffusion," 2002 Lester Eastman Conference on High Performances Devices, Ithaca, NY, 2002.
6. L. Wemersson, S. Kaberr, V. Zela, E. Lind, J. Zhang, W. Seifert, T. H. Kosel, A. Seabaugh, "A Combined Chemical Vapor Deposition and Rapid Thermal Diffusion Process for SiGe Esaki Diodes by Ultra-Shallow Junction Formation," IEEE Transactions On Nanotechnology, 4, pp. 594-598, Sept. 2005.
7. N. Jin, S.-Y. Chung, R. Yu, P. R. Berger, and P. E. Thompson, "Temperature Dependent DC/RF Performance of Si/SiGe Resonant Interband Tunneling Diodes," Electronics Letters, vol. 41, pp. 63-64, Apr. 2005.