A combined chemical vapor deposition and rapid thermal diffusion process for SiGe Esaki diodes by ultra-shallow junction formation

IEEE Transactions on Nanotechnology

Volumn 4, Issue 5, 2005, Pages 594-597

  Wernersson, Lars Erik ^a,b   Kabeer, Sajid ^a   Zela, Vilma ^b   Lind, Erik ^b   Zhang, J ^a   Seifert, Werner ^b,c   Kosel, Thomas H ^a   Seabaugh, Alan ^a,d,e  

^a University of Notre Dame   (United States)

^b LUND UNIVERSITY   (Sweden)

^c Epitaxy Group   (South Korea)

^d UNIVERSITY OF NOTRE DAME   (United States)

^e AMERICAN PHYSICAL SOCIETY   (United States)

Author keywords

Esaki diode; SiGe; Tunnel diode; Ultra high vacuum chemical vapor deposition (UHV CVD)

Indexed keywords

ESAKI DIODE; SIGE; TEMPERATURE DEPENDENCE; ULTRA-HIGH-VACUUM CHEMICAL-VAPOR-DEPOSITION (UHV CVD);

CHEMICAL VAPOR DEPOSITION; CRYSTALLINE MATERIALS; CURRENT DENSITY; DIFFUSION; DIODES; ELECTRIC CURRENTS; ELECTRODES; SEMICONDUCTOR JUNCTIONS; THERMAL DIFFUSION; TUNNEL DIODES;

SILICON COMPOUNDS;

EID: 26644439300     PISSN: 1536125X     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNANO.2005.851426     Document Type: Article

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