Temperature dependent DC/RF performance of Si/SiGe resonant interband tunnelling diodes

Electronics Letters

Volumn 41, Issue 9, 2005, Pages 559-560

  Jin, N ^a   Chung, S Y ^a   Yu, R ^b   Berger, P R ^a,b   Thompson, P E ^c  

^a The Ohio State University   (United States)

^b OHIO STATE UNIVERSITY   (United States)

^c NAVAL RESEARCH LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DENSITY; ELECTRIC NETWORK ANALYZERS; MICROWAVES; MOLECULAR BEAM EPITAXY; POLYIMIDES; RAPID THERMAL ANNEALING; SEMICONDUCTOR LASERS;

PEAK CURRENT DENSITY; PEAK-TO-VALLEY CURRENT RATIO (PVCR); RESONANT INTERBAND TUNNELING DIODES (RITD); SHORT-OPEN-LOAD-THROUGH (SOLT);

SEMICONDUCTING SILICON COMPOUNDS;

EID: 18744367261     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20050020     Document Type: Article

References (6)

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3. Auer, U., et al.: 'Low-voltage MOBILE logic module based on Si/SiGe interband tunneling diodes', IEEE Electron Device Lett., 2001, 22, pp. 215-217
4. Dashiell, M.W., et al.: 'Low-voltage MOBILE logic module based on Si/SiGe interband tunneling diodes', IEEE Electron Device Lett., 2002, 23, pp. 357-359
5. Dashiell, M.W., et al.: 'Current-voltage characteristics of high current density silicon Esaki diodes grown by molecular beam epitaxy and the influence of thermal annealing', IEEE Trans. Electron Devices, 2000, 47, pp. 1707-1714
6. Wang, J., et al.: ' Silicon tunnel diodes formed by proximity rapid thermal diffusion'. Proc. of IEEE Lester Eastman Conference on High Performance Devices, 2002, pp. 393-401