Nanometer scale InGaAs HEMT technology for ultra high speed IC

Conference Proceedings - International Conference on Indium Phosphide and Related Materials

Volumn 2006, Issue , 2006, Pages 30-35

  Seo, Kwang K ^a   Kim, Dae Hyun ^a  

^a Seoul National University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

DIGITAL CIRCUITS; HIGH ELECTRON MOBILITY TRANSISTORS; MONOLITHIC MICROWAVE INTEGRATED CIRCUITS; NANOSTRUCTURED MATERIALS; PERMITTIVITY; SEMICONDUCTING INDIUM GALLIUM ARSENIDE;

NANO PATTEMING TECHNIQUES; SIDEWALL GATE PROCESS; ULTRA HIGH SPEED INTEGRATED CIRCUIT;

INTEGRATED CIRCUIT LAYOUT;

EID: 33847120746     PISSN: 10928669     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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